Efek Holding Time Terhadap Struktur, Sifat Listrik dan Magnet Material Cu-Doped ZnO

Abstract

Material of ZnCuO (x2, 3 and 4 at%) with the starting materials ZnO powder and CuO powder technical material synthesized by using solid state reaction method, compacted and then sintering at temperatures 900 °C with holding times 2, 4 and 8 hours. Investigation results showed that the structure of ZnCuO has wurtzite hexagonal crystal structure, with no evidence of secondary phase. Based on the parameters crystal XRD results indicated that the dopant Cu has been substituted into the ZnO lattice. The addition of dopant concentration and holding time reduce the quality and size of the crystal ZnCuO insignificantly with crystal size range around 43.2 nm 55.3 nm. I-V meter measurements show that ZnCuO is a semiconductor material with a conductivity range of about 1.905 x 10 - 2.74 x 10 S/cm. In addition, dopant concentration (3 at% Cu), the increased holding time increasing the conductivity of the material. Measurement of C-V meter shows the variation of dopant concentration Cu no capacitance changes significantly but there is a change in the form of value-added capacitance when compared to pure ZnO. ZnO becomes paramagnetic with increasing concentration of dopant Cu.